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| Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power -- 2.1 Watts Power Gain -- 13.5 dB Efficiency -- 21% * Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power Features * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. MRF21010LR1 MRF21010LSR1 2110 - 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 43.75 0.25 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 5.5 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21010LR1 MRF21010LSR1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID =10 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 50 A) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain- Source On - Voltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 10 V, ID = 1 A) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Gps 12 13.5 -- dB Crss -- 1 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 2.5 -- -- 3 4 0.4 0.95 4 4.5 0.5 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit 31 35 -- % IMD -- - 35 - 30 dBc IRL -- - 12 - 10 dB P1dB Gps -- -- 11 12 -- -- W dB -- 42 -- % MRF21010LR1 MRF21010LSR1 2 RF Device Data Freescale Semiconductor VGG + C3 R1 R2 C6 C4 C5 Z4 Z5 C7 + C8 + C9 VDD RF INPUT DUT Z1 Z2 C2 C1 Z3 Z6 Z7 C10 Z8 RF OUTPUT Z1 Z2 Z3 Z4 Z5 0.964 x 0.087 Microstrip 0.905 x 0.087 Microstrip 0.433 x 0.512 Microstrip 1.068 x 0.087 Microstrip 0.752 x 0.087 Microstrip Z6 Z7 Z8 PCB 0.453 x 1.118 Microstrip 0.921 x 0.154 Microstrip 0.925 x 0.087 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 Figure 1. MRF21010L Test Circuit Schematic Table 5. MRF21010L Test Circuit Component Designations and Values Part C1 * C2 C3, C9 C4, C7 C5, C6 C8 C10 N1, N2 R1 R2 (eared) (earless) Description 2.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.5 pF Chip Capacitor 10 F, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors 5.6 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitor 10 pF Chip Capacitor Type N Connector Flange Mounts 1.0 kW Chip Resistor (0805) 12 W Chip Resistor (0805) 100B100GW 3052- 1648- 10 ATC Macom Part Number 100B2R2BW 100B1R8BW 100B0R5BW 293D106X9035D2T 100B102JW 100B5R6BW Manufacturer ATC ATC ATC Sprague- Vishay ATC ATC * Piece part depending on eared / earless version of the device. C8 VGG C3 R1 R2 C4 C5 C6 C7 C9 VDD RF Input C2 C1 C10 RF Output CUTOUT AREA MRF21010 C-XM-00-001-01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21010L Test Circuit Component Layout MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor 3 VGG V DD Ground C1 R2 R1 T1 R3 C6 T2 P1 C4 C5 R4 C2 C3 C7 C10 R6 R5 C8 L1 L2 L3 L4 C9 L5 MRF21010 C-XM-99-001-01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. MRF21010L Demonstration Board Component Layout Table 6. MRF21010L Demonstration Board Component Designations and Values Designators C1 C2, C6 C3, C4 C5 C7 C8, C10 C9 L1 L2 L3 L4 L5 R1, R6 R2, R3 R4 R5 P1 T1 T2 PCB Description 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA 10 mF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT 10 nF Chip Capacitor (0805), AVX #08055C103KATDA 1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT 0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT 10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT 19 mm x 1.07 mm 7.7 mm x 13.8 mm 9.3 mm x 22 mm 17.7 mm x 3.5 mm 3.4 mm x 1.5 mm 10 W, 1/8 W Chip Resistors (0805) 1 kW, 1/8 W Chip Resistors (0805) 2.2 kW, 1/8 W Chip Resistor (0805) 0 W, 1/8 W Chip Resistor (0805) 5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W Voltage Regulator, Micro - 8, #LP2951 Bipolar NPN Transistor, SOT - 23, #BC847 Rogers RO4350, 0.5 mm, r = 3.53 MRF21010LR1 MRF21010LSR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2000 2080 2140 2110 2170 f, FREQUENCY (MHz) 2200 Gps IMD IRL VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing 0 -5 -10 -15 -20 -25 -30 -35 -40 2280 30 VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) Gps -10 ACPR, ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) -20 20 -30 15 -40 10 ACPR -50 -60 3.5 5 0.5 2 1.5 2.5 3 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA 1 Figure 4. Class AB Broadband Circuit Performance Figure 5. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 130 mA 80 mA 100 mA 150 mA VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0.1 1 10 100 7th Order 5th Order VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 3rd Order 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power 14.5 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 14.0 G ps , POWER GAIN (dB) 150 mA 13.5 130 mA 100 mA 13.0 80 mA G ps , POWER GAIN (dB) 15 Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing -30 -32 -34 Gps -36 -38 IMD -40 14 13 12.5 12.0 0.1 1 10 100 12 22 Pout, OUTPUT POWER (WATTS) PEP 26 28 30 VDD, DRAIN VOLTAGE (VOLTS) -42 32 Figure 8. Power Gain versus Output Power Figure 9. Intermodulation and Gain versus Supply Voltage MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor 5 f = 1990 MHz Zload f = 2230 MHz Zo = 10 f = 1990 MHz Zsource f = 2230 MHz VDD = 28 V, IDQ = 100 mA, Pout = 10 W PEP f MHz 1990 2110 2230 Zsource 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF21010LR1 MRF21010LSR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 3 (FLANGE) 2X B 2 D bbb M T A 2X M K B M (LID) R (LID) N ccc M TA C M B M ccc H M TA M B M E F T (INSULATOR) SEATING PLANE (INSULATOR) S DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M TA M B M aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A CASE 360B - 05 ISSUE G NI - 360 MRF21010LR1 A B (FLANGE) A 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (FLANGE) B 2 2X D M 2X K M (LID) bbb TA M B R (LID) N ccc M M TA M B F M ccc E TA M B M H C (INSULATOR) S PIN 3 bbb M (INSULATOR) M T M SEATING PLANE M aaa M TA M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF TA B 360C - 05 ISSUE E NI - 360S MRF21010LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF21010LR1 MRF21010LSR1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21010LR1 MRF21010LSR1 8Rev. 9, 5/2006 Document Number: MRF21010 RF Device Data Freescale Semiconductor |
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